Calhoun: The NPS Institutional Archive
Calhoun is the public access digital archive for NPS. The purpose of Calhoun is to make NPS-created scholarly content visible, searchable and available to the world. NPS faculty and researchers are invited to publish research works, documents and data in Calhoun. For more information, contact: NPSCalhoun@nps.edu.Learn more about Calhoun.
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(IEEE, 2003-06);A historical review of radiation effects on III–V semiconductor devices is presented. The discussion ranges from examining early material and device studies to present-day understanding of III–V radiation effects. The ...
Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits (IEEE, 1997-12);Heavy-ion Single Event Effects (SEE) test results reveal the roles of growth temperature and buffer layer thickness in the use of a low-temperature grown GaAs (LT GaAs) buffer layer for suppressing SEE sensitivity in GaAs ...
DC-to-mm-wave-absolute potential measurements inside digital microwave ICs using a micromachined photoconductive sampling probe (1998);A micromachined photoconductive sampling probe is used to determine detailed wave forms at different circuit nodes and corresponding propagation delays from within an InP HBT frequency divider operating at 2.7 GHz. The ...